ss22s-m3, ss23s-m3, SS24S-M3 www.vishay.com vishay general semiconductor revision: 09-dec-13 1 document number: 89407 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount schottky barrier rectifier features ? low profile package ? ideal for automated placement ? low forward voltage drop, low power losses ? high efficiency ? high surge capability ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in low voltage, high frequency inverters, freewheeling, dc/dc converte rs, and polarity protection applications. mechanical data case: do-214ac (sma) ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 2.0 a v rrm 20 v, 30 v, 40 v i fsm 40 a v f at i f = 2.0 a 0.517 v t j max. 150 c package do-214ac (sma) diode variation single die do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ss22s ss23s ss24s unit device marking code 22s 23s 24s maximum repetitive pe ak reverse voltage v rrm 20 30 40 v maximum average forward rectified current (fig. 1) i f(av) 2.0 a peak forward surge current 10 ms single ha lf sine-wave superimposed on rated load i fsm 40 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j, t stg -55 to +150 c
ss22s-m3, ss23s-m3, SS24S-M3 www.vishay.com vishay general semiconductor revision: 09-dec-13 2 document number: 89407 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms note (1) pcb mounted with 0.4" x 0.4" (10 mm x 10 mm) copper pad areas ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - forward power loss characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage i f = 1 a t j = 25 c v f (1) 0.436 - v i f = 2 a 0.517 0.55 reverse current rated v r t j = 25 c i r (2) 13 200 a t j = 100 c 1.65 8 ma typical junction capa citance 4.0 v, 1 mhz c j 130 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ss22s ss23s ss24s unit typical thermal resistance r ? ja (1) 75 c/w r ? jl (1) 25 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode SS24S-M3/61t 0.064 61t 1800 7" diamet er plastic tape and reel SS24S-M3/5at 0.064 5at 7500 13" di ameter plastic tape and reel 2.4 2.0 1.6 1.2 0.8 0.4 0 0 25 50 75 100 125 150 175 p.c.b. mounted on 0.4 " x 0.4 " (10 mm x 10 mm) copper pad area s average forwar d rectified current (a) lead temperature (c) re s i s tive or inductive load 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 average forward current (a) average power lo ss (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 d = t p /t t p t
ss22s-m3, ss23s-m3, SS24S-M3 www.vishay.com vishay general semiconductor revision: 09-dec-13 3 document number: 89407 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - maximum non-repetiti ve peak forward surge current fig. 4 - typical instantaneous forward characteristics fig. 5 - typical reverse leakage characteristics fig. 6 - typical j unction capacitance package outline dimensions in inches (millimeters) 50 40 30 20 10 0 0 10 100 number of cycle s at 60 hz peak forwar d s urge current (a) 8.3 m s s ingle half s ine-wave at rated t l 100 10 1 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) t j = 150 c t j = 125 c t j = 25 c t j = 150 c t j = 125 c t j = 25 c 100 000 10 000 1000 100 10 10 20 30 40 50 60 70 80 90 100 1 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (a) 100 10 10 100 1000 0.1 1 rever s e voltage (v) junction capacit ance (pf) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pad layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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